MJD31C डाटा शीट PDF( Datasheet )

Elektronische Bauelemente MJD31C 3A , 100V NPN Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Designed for general Excellent DC Current Gai

Features  BVCEO > 100V  IC = 3A high Continuous Collector Current  ICM = 5A Peak Pulse Current  Ideal for Power Switching or Amplification Applications  Complementary PNP Type: MJD32C  Totally

isc Silicon NPN Power Transistors DESCRIPTION ·DC Current Gain -hFE = 25(Min)@ IC= 1A ·Collector-Emitter Breakdown Voltage- : V(BR) CEO= 100V(Min) ·Complement to Type MJD32C ·DPAK for Surface Mount Applica

SMD Type Transistors Complementary Power Transistors MJD31,MJD31C(NPN) MJD32,MJD32C(PNP) Features Lead Formed for Surface Mount Applications in Plastic Sleeves Pb-Free Packages are Available +09.70 .2 -0.2

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company COMPLEMENTARY PLASTIC POWER TRANSISTORS MJD31, C NPN MJD32, C PNP DPAK (TO-252) Plastic Package Designed for General

MJD31 (NPN), MJD32 (PNP) Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features • Lead Formed for Surface M

MJD31C Low voltage NPN power transistor Features ■ Surface-mounting TO-252 power package in tape and reel ■ Complementary to the PNP type MJD32C Application ■ General purpose linear and switching equipm