MJD3055 डाटा शीट PDF( Datasheet )

isc Silicon NPN Power Transistor INCHANGE Semiconductor MJD3055 DESCRIPTION ·Excellent Safe Operating Area ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.1 V(Max)@ IC = 4A ·Complement to Type MJD2955

MJD3055 MJD3055 General Purpose Amplifier Low Speed Switching Applications D-PAK for Surface Mount Applications • • • • • Lead Formed for Surface Mount Applications (No Suffix) Straight Lead (I-PAK,

MJD2955 ® MJD3055 COMPLEMENTARY POWER TRANSISTORS s STMicroelectronics PREFERRED SALESTYPES s SURFACE-MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIX "T4") s ELECTRICALLY SIMILAR TO MJE2955T AND

www.DataSheet4U.com MJD2955 (PNP) MJD3055 (NPN) Complementary Power Transistors DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose amplifier and low speed switching application

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJD2955/D Complementary Power Transistors • • • • • • MJD2955 PNP MJD3055 SILICON POWER TRANSISTORS 10 AMPERES 60 VOLTS 20 WATTS NPN

Epitaxial Planar NPN Transistor FEATURES  Lead formed for surface mount applications. Pb Lead-free  Straight lead.  Electrically similar to popular MJE3055T.  DC current gain specified to 10A.

SMD Power Transistor (NPN) MJD3055 SMD Power Transistor (NPN) Features • Designed for general purpose amplifier and low speed switching applications • RoHS compliance Mechanical Data Case: Terminals: Wei