डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
MJD2955 | Silicon PNP Power Transistor isc Silicon PNP Power Transistor
DESCRIPTION ·Excellent Safe Operating Area ·Collector-Emitter Saturation Voltage-
: VCE(sat)= -1.1 V(Max)@ IC = -4A ·Complement to Type MJD3055 ·DPAK for Surface Mount Appl |
Inchange Semiconductor |
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MJD2955 | Complementary Power Transistors www.DataSheet4U.com
MJD2955 (PNP) MJD3055 (NPN) Complementary Power Transistors
DPAK For Surface Mount Applications
http://onsemi.com
Designed for general purpose amplifier and low speed switching application |
ON |
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MJD2955 | Complementary Silicon Power Transistors MJD2955 ® MJD3055
COMPLEMENTARY POWER TRANSISTORS
s STMicroelectronics PREFERRED SALESTYPES
s SURFACE-MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIX "T4")
s ELECTRICALLY SIMILAR TO MJE2955T AND |
ST Microelectronics |
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MJD2955 | General Purpose Amplifier MJD2955
MJD2955
General Purpose Amplifier Low Speed Switching Applications D-PAK for Surface Mount Applications
• • • • • Lead Formed for Surface Mount Applications (No Suffix) Straight Lead (I-PAK, |
Fairchild |
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MJD2955 | SILICON POWER TRANSISTORS MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJD2955/D
Complementary Power Transistors
• • • • • •
MJD2955 PNP MJD3055
SILICON POWER TRANSISTORS 10 AMPERES 60 VOLTS 20 WATTS
NPN |
Motorola |
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MJD2955 | PNP Transistor JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-251-3L Plastic-Encapsulate Transistors
MJD2955 TRANSISTOR (PNP)
FEATURES y Designed for General Purpose Amplifier and Low Speed
Switching Applications y |
JCST |
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MJD2955 | Epitaxial Planar NPN Transistor Production specification
Epitaxial Planar PNP Transistor
FEATURES
Lead formed for surface mount
Pb
applications.
Lead-free
Straight lead.
Electrically similar to popular MJE2955T.
DC cu |
GME |
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