डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
MJD253 | Silicon PNP Power Transistor isc Silicon PNP Power Transistor
DESCRIPTION ·High DC Current Gain-
: hFE = 40(Min) @ IC= -0.2 A ·Low Collector Saturation Voltage-
: VCE(sat) = -0.3V(Max.)@ IC= -0.5 A ·Complement to the NPN MJD243 ·Minim |
Inchange Semiconductor |
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MJD253 | Silicon PNP transistor MJD253
Rev.E May.-2016
DATA SHEET
描述 / Descriptions TO-252 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a TO-252 Plastic Package.
特征 / Features
低 VCEO,高电流增益。 Lo |
BLUE ROCKET ELECTRONICS |
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MJD253 | Complementary Silicon Plastic Power Transistor MJD243 (NPN), MJD253 (PNP)
Preferred Device
Complementary Silicon Plastic Power Transistor
DPAK−3 for Surface Mount Applications
Designed for low voltage, low−power, high−gain audio amplifier application |
ON |
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