MJD210 डाटा शीट PDF( Datasheet )

isc Silicon PNP Power Transistor DESCRIPTION ·High DC Current Gain- : hFE = 70(Min) @ IC= -0.5A ·Low Collector Saturation Voltage- : VCE(sat) = -0.3V(Max.)@ IC= -0.5 A ·Complement to the NPN MJD200 ·Minimu

MJD210 MJD210 D-PAK for Surface Mount Applications • • • • High DC Current Gain Low Collector Emitter Saturation Voltage Lead Formed for Surface Mount Applications (No Suffix) Straight Lead (I-PAK, �

www.DataSheet4U.com MJD200 (NPN) MJD210 (PNP) Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For Surface Mount Applications Designed for low voltage, low−power, high−gain audio amplifier appl

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJD200/D Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For Surface Mount Applications . . . designed for low voltage, low–power,

UNISONIC TECHNOLOGIES CO., LTD MJD210 PNP SILICON TRANSISTOR PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS  DESCRIPTION The UTC MJD210 is designed for low voltage, low-power, high-gain audio amplifier a