MJD148 डाटा शीट PDF( Datasheet )

isc Silicon NPN Power Transistor DESCRIPTION ·DC Current Gain- : hFE = 85(Min) @ IC= 0.5A ·Low Collector Saturation Voltage- : VCE(sat) = 0.5V(Max.)@ IC= 2A ·DPAK for Surface Mount Applications ·Minimum Lo

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLASTIC POWER TRANSISTORS MJD148 DPAK (TO-252) Plastic Package Designed for General Purpose Amplifier and

MJD148 NPN Silicon Power Transistor DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. • High Gain − 50 Min @ IC = 2.0 A • Low Saturation Volt