MJD13003 डाटा शीट PDF( Datasheet )

MJD13003 High Voltage SWITCHMODET Series DPAK For Surface Mount Applications This device is designed for high−voltage, high−speed power switching inductive circuits where fall time is critical. It is par

isc Silicon NPN Power Transistor DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Collector Saturation Voltage : VCE(sat) = 1.0(Max) @ IC= 1.0A APPLICATIONS ·Designed for use in

SMD Power Transistor (NPN) MJD13003 SMD Power Transistor (NPN) Features  Designed for high voltage, high speed power switching inductive circuits applications  RoHS compliance Mechanical Data Case: Ter