MJD127 डाटा शीट PDF( Datasheet )

MJD127 MJD127 D-PAK for Surface Mount Applications • • • • • • High DC Current Gain Built-in a Damper Diode at E-C Lead Formed for Surface Mount Applications (No Suffix) Straight Lead (I-PAK, “ -

MJD122 MJD127 Complementary power Darlington transistors Features ■ Low collector-emitter saturation voltage ■ Integrated antiparallel collector-emitter diode Applications ■ General purpose linear and sw

INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor MJD127 DESCRIPTION ·Low Collector-Emitter saturation voltage ·Lead formed for surface mount applications ·High DC current gain ·100% tes

MJD122, NJVMJD122 (NPN), MJD127, NJVMJD127 (PNP) Complementary Darlington Power Transistor DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Featu

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJD122/D Complementary Darlington Power Transistors DPAK For Surface Mount Applications • • • • Designed for general purpose amplifier and

MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MJD127 Features • Lead Free Finish/RoHS Compliant ("P"

Epitaxial Planar PNP Transistor FEATURES  High DC Current Gain.  Built-in a Damper Diode at E-C. Pb Lead-free  Lead Formed for Surface Mount Applications.  Straight Lead.  Complement to MJD