MJD122 डाटा शीट PDF( Datasheet )

Epitaxial Planar NPN Transistor FEATURES  High DC Current Gain.  Built-in a Damper Diode at E-C. Pb Lead-free  Lead Formed for Surface Mount Applications.  Straight Lead.  Complement to MJD

MJD122, NJVMJD122 (NPN), MJD127, NJVMJD127 (PNP) Complementary Darlington Power Transistor DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Featu

MJD122 MJD127 Complementary power Darlington transistors Features ■ Low collector-emitter saturation voltage ■ Integrated antiparallel collector-emitter diode Applications ■ General purpose linear and sw

MJD122 — NPN Silicon Darlington Transistor March 2016 MJD122 NPN Silicon Darlington Transistor Features • D-PAK for Surface Mount Applications • High DC Current Gain • Built-in a Damper Diode at E-C

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJD122/D Complementary Darlington Power Transistors DPAK For Surface Mount Applications • • • • Designed for general purpose amplifier and

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor MJD122 DESCRIPTION ·High DC current gain ·Built-in a damper diode at E-C ·Monolithic Construction With Built-in Base-Emitter Shunt Resist

SMD Darlington Power Transistor (NPN) MJD122 SMD Darlington Power Transistor (NPN) Features • Designed for general purpose amplifier and low speed switching applications • RoHS compliance Mechanical Data