डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
MJ2955 | PNP Transistor isc Silicon PNP Power Transistors
DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain-
: hFE=20-70@IC= -4A ·Collector-Emitter Saturation Voltage-
: VCE(sat)= -1.1V(Max)@ IC= -4A ·Complement to Type |
INCHANGE |
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MJ2955 | Complementary Power Transistors 2N3055, MJ2955
Complementary Power Transistors
Designed for use in general-purpose amplifier and switching applications.
Features:
• Power dissipation - PD = 115W at TC = 25°C. • DC current gain hFE = 20 t |
Multicomp |
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MJ2955 | PNP SILICON POWER TRANSISTORS MJ2955
PNP SILICON POWER TRANSISTORS
The MJ2955 is a silicon Planar Epitaxial NPN transistor in Jedec TO-3 metal case. Designed for general purpose, moderate speed, switching and amplifier applications Compli |
COMSET |
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MJ2955 | Silicon PNP Transistor MJ2955 Silicon PNP Power Transistor Audio Power Amp, Medium Speed Switch
TO−3 Type Package
Description: The MJ2955 is a silicon PNP transistor in a TO−3 type case designed for general purpose switching and |
NTE |
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MJ2955 | Complementary Silicon Power Transistors TAB
1 2
TO-3 Figure 1. Internal schematic diagram
2N3055, MJ2955
Complementary power transistors
Datasheet - production data
Features
• Low collector-emitter saturation voltage • Complementary NPN - PNP tr |
ST Microelectronics |
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MJ2955 | 15 AMPERE POWER TRANSISTORS MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by 2N3055/D
Complementary Silicon Power Transistors
. . . designed for general–purpose switching and amplifier applications. • DC Current Gain � |
Motorola |
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MJ2955 | COMPLEMENTARY SILICON POWER TRANSISTORS 2N3055 NPN MJ2955 PNP
COMPLEMENTARY SILICON POWER TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3055 and MJ2955 are complementary silicon power transistors manufactu |
CENTRAL SEMICONDUCTOR |
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