MJ11014 डाटा शीट PDF( Datasheet )
डेटा पत्रक ( Datasheet PDF ) |
| भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
| MJ11014 | 30 AMPERE DARLINGTON POWER TRANSISTORS MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJ11012/D
High-Current Complementary Silicon Transistors
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ |
 Motorola Inc |
|
| MJ11014 | DARLINGTON POWER TRANSISTORS MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJ11012/D
High-Current Complementary Silicon Transistors
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ |
 ON Semiconductor |
|
| MJ11014 | NPN Transistor MJ11012, MJ11014, MJ11016
High-reliability discrete products and engineering services since 1977
NPN SILICON POWER DARLINGTON TRANSISTORS
FEATURES Available as “HR” (high reliability) screened per MI |
 DIGITRON |
|
| MJ11014 | NPN Transistor isc Silicon NPN Darlington Power Transistor
MJ11014
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 90V(Min.) ·High DC Current Gain-
: hFE= 1000(Min.)@IC= 20A ·Low Collector Saturation Voltag |
 INCHANGE |
शेयर लिंक :
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