MJ11013 डाटा शीट PDF( Datasheet )
डेटा पत्रक ( Datasheet PDF ) |
| भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
| MJ11013 | DARLINGTON POWER TRANSISTORS MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJ11012/D
High-Current Complementary Silicon Transistors
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ |
 ON Semiconductor |
|
| MJ11013 | 30 AMPERE DARLINGTON POWER TRANSISTORS MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJ11012/D
High-Current Complementary Silicon Transistors
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ |
 Motorola Inc |
|
| MJ11013 | POWER TRANSISTOR isc Silicon PNP Darlington Power Transistor
MJ11013
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -90V(Min.) ·High DC Current Gain-
: hFE= 1000(Min.)@IC= -20A ·Low Collector Saturation Volt |
 Inchange Semiconductor |
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