MJ11012 डाटा शीट PDF( Datasheet )

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJ11012/D High-Current Complementary Silicon Transistors ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

MJ11015 (PNP); MJ11012, MJ11016 (NPN) MJ11016 is a Preferred Device High-Current Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • Hi

MJ11012, MJ11014, MJ11016 High-reliability discrete products and engineering services since 1977 NPN SILICON POWER DARLINGTON TRANSISTORS FEATURES  Available as “HR” (high reliability) screened per MI

isc Silicon NPN Darlington Power Transistor MJ11012 DESCRIPTION ·Collector-Emitter Breakdown Voltage : V(BR)CEO= 60V(Min.) ·High DC Current Gain- : hFE= 1000(Min.)@IC= 20A ·Low Collector Saturation Voltage