डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
MJ11011 | PNP Transistor isc Silicon PNP Darlington Power Transistor
MJ11011
DESCRIPTION ·Collector-Emitter Breakdown Voltage
: V(BR)CEO= -60V(Min.) ·High DC Current Gain-
: hFE= 1000(Min.)@IC= -20A ·Low Collector Saturation Volta |
INCHANGE |
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MJ11015 | 30 AMPERE DARLINGTON POWER TRANSISTORS | Motorola Inc |
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MJ11015 | High-Current Complementary Silicon Transistors | ON Semiconductor |
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MJ11016 | High-Current Complementary Silicon Transistors | ON Semiconductor |
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MJ11016 | Silicon NPN Darlington Power Transistor | Inchange Semiconductor |
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MJ11011 | PNP Transistor | INCHANGE |
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MJ11013 | 30 AMPERE DARLINGTON POWER TRANSISTORS | Motorola Inc |
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MJ11012 | High-Current Complementary Silicon Transistors | ON Semiconductor |
|
MJ11013 | DARLINGTON POWER TRANSISTORS | ON Semiconductor |
|
MJ11012 | 30 AMPERE DARLINGTON POWER TRANSISTORS | Motorola Inc |
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MJ11014 | 30 AMPERE DARLINGTON POWER TRANSISTORS | Motorola Inc |
www.DataSheet.in | 2017 | संपर्क |