डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
MJ10012T | Silicon NPN Power Transistor isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
VCEO(SUS)= 400V(Min) ·High Power Dissipation ·DARLINGTON ·100% avalanche tested ·Minimum Lot-to-Lot variation |
Inchange Semiconductor |
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MJ10012 | 10 AMPERE POWER TRANSISTORS | Motorola Inc |
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MJ10012 | NPN Silicon Power Darlington Transistor | NTE |
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MJ10012 | Silicon NPN Power Transistors | SavantIC |
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MJ10012 | NPN Silicon Transistor | Wing Shing Computer Components |
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MJ10012T | Silicon NPN Power Transistor | Inchange Semiconductor |
www.DataSheet.in | 2017 | संपर्क |