MJ1001 डाटा शीट PDF( Datasheet )

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJ1000/D Medium-Power Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications.

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors MJ1000/1001 www.datasheet4u.com DESCRIPTION ·With TO-3 package ·DARLINGTON ·High DC current gain ·Complement to type MJ900/901

NPN MJ1000 – MJ1001 COMPLEMENTARY POWER DARLINGTONS The MJ1000, MJ1001 are silicon epitaxial-bas transistors in monolithic Darlington configuration, and are mounted in JEDEC TO-3 metal case. They are intended

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJ10012/D NPN Silicon Power Darlington Transistor The MJ10012 and MJH10012 are high–voltage, high–current Darlington transistors designed for

MJ10012 NPN SILICON TRANSISTOR SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS TO-3 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage Collect

SavantIC Semiconductor Silicon NPN Power Transistors Product Specification MJ10012 DESCRIPTION ·With TO-3 package ·High voltage,high current ·DARLINGTON APPLICATIONS ·Automotive ignition ·Switching regul

MJ10012 NPN Silicon Power Darlington Transistor TO3 Type Package Description: The MJ10012 is high−voltage, high−current Darlington transistor in a TO3 type package designed for automotive ignition, switchi