MJ1000 डाटा शीट PDF( Datasheet )

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJ1000/D Medium-Power Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications.

isc Silicon NPN Darlington Power Transistor MJ1000 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min.) ·High DC Current Gain- : hFE= 1000(Min.)@IC= 3A ·Low Collector Saturation Voltage-

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors MJ1000/1001 www.datasheet4u.com DESCRIPTION ·With TO-3 package ·DARLINGTON ·High DC current gain ·Complement to type MJ900/901

NPN MJ1000 – MJ1001 COMPLEMENTARY POWER DARLINGTONS The MJ1000, MJ1001 are silicon epitaxial-bas transistors in monolithic Darlington configuration, and are mounted in JEDEC TO-3 metal case. They are intended

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJ10000/D MJ10000 Designer's SWITCHMODE Series NPN Silicon Power Darlington Transistor The MJ10000 Darlington transistor is designed for high–v

MJ10000 NPN SILICON TRANSISTOR SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS TO-3 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage Collect

MJ10001 NPN SILICON TRANSISTOR SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS TO-3 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage Collect