डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
MIT-4A11 | SUBMINIATURE PHOTOINTERRUPTER SUBMINIATURE PHOTOINTERRUPTER
Description
The MIT-4A11A consists of a Gallium Arsenide infrared emitting diode and a NPN silicon phototransistor , double-layer mold plastic package. It is a transmissive submini |
Unity Opto Technology |
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MIT-4A11A | SUBMINIATURE PHOTOINTERRUPTER SUBMINIATURE PHOTOINTERRUPTER
Description
The MIT-4A11A consists of a Gallium Arsenide infrared emitting diode and a NPN silicon phototransistor , double-layer mold plastic package. It is a transmissive submini |
Unity Opto Technology |
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MIT-4A11B | SUBMINIATURE PHOTOINTERRUPTER SUBMINIATURE PHOTOINTERRUPTER
Description
The MIT-4A11B consists of a Gallium Arsenide infrared emitting diode and a NPN silicon phototransistor , double-layer mold plastic package. It is a transmissive submini |
Unity Opto Technology |
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