डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
MG150Q2YS65H | High Power & High Speed Switching Applications MG150Q2YS65H
TOSHIBA IGBT Module Silicon N Channel IGBT
MG150Q2YS65H
High Power & High Speed Switching Applications
Unit: mm
· High input impedance · Enhancement-mode · The electrodes are isolated from cas |
Toshiba Semiconductor |
|
MG150Q2YS65H | High Power & High Speed Switching Applications | Toshiba Semiconductor |
www.DataSheet.in | 2017 | संपर्क |