| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
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Matsuki |
N-Channel MOSFET ● RDS(ON) ≦4Ω@VGS=10V ● RDS(ON) ≦4Ω@VGS=4.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability ● Capable doing Cu wire bonding APPLICATIONS ● Power Management in Note book ● Porta |
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|
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|
Matsuki |
N-Channel MOSFET ● RDS(ON) ≦4Ω@VGS=10V ● RDS(ON) ≦4Ω@VGS=4.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability ● Capable doing Cu wire bonding APPLICATIONS ● Power Management in Note book ● Porta |
|