MDD1903 डाटा शीट PDF( Datasheet )

MDD1903 – Single N-Channel Trench MOSFET 100V Preliminary – Subject to change without notice MDD1903 Single N-channel Trench MOSFET 100V, 11A, 120mΩ General Description The MDD1903 uses advanced MagnaChi

MDD1903 – Single N-Channel Trench MOSFET 100V Preliminary – Subject to change without notice MDD1903 Single N-channel Trench MOSFET 100V, 11A, 120mΩ General Description The MDD1903 uses advanced MagnaChi

isc N-Channel MOSFET Transistor MDD1903RH FEATURES ·Drain Current : ID= 12.8A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 105mΩ(Max) @ VGS= 10V ·100%