MBR340 डाटा शीट PDF( Datasheet )

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MBR320/D Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the�

Bulletin PD-20594 rev. B 03/03 MBR350 MBR360 SCHOTTKY RECTIFIER 3.0 Amp Major Ratings and Characteristics Characteristics IF(AV) Rectangular waveform VRRM IFSM @ tp = 5 µs sine VF TJ @ 3 Apk, TJ = 25°C Des

MBR340 Preferred Device Axial Lead Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction

DIP Type Schottky Barrier Rectifier MBR320 ~ MBR3100 TransDisiotodress Ƶ Features ƽ Metal silicon junction, majority carrier conduction ƽ Low power loss, high efficiency ƽ High forward surge current capa

MBR320-MBR360 High-reliability discrete products and engineering services since 1977 3 AMP SCHOTTKY RECTIFIERS FEATURES  Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. A

MBR340 Vishay High Power Products Schottky Rectifier, 3 A Cathode Anode C-16 PRODUCT SUMMARY IF(AV) VF at 3 A at 25 °C IRM VR 3A 0.6 V 20 mA at 125 °C 40 V MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHA

www.eicsemi.com MBR320 ~ MBR340 PRV : 20 - 40 Volts IO : 3.0 Amperes FEATURES : * High current capability * High surge current capability * High reliability * High efficiency * Low power loss * Low forward vol