MBR3060 डाटा शीट PDF( Datasheet )

Schottky Barrier Rectifier INCHANGE Semiconductor MBR3060 FEATURES ·Low forward voltage ·Guarding for stress protection ·150℃ operating junction temperature ·100% avalanche tested ·Minimum Lot-to-Lot v

MBR3060 Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivat

MCC Features • • • •
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# MBR3020 THRU MBR30100 30 Amp Schottky Barrier Rectifier 20 to 10

MBR3020 THRU MBR30100 o 30.0 AMP SCHOTTKY BARRIER RECTIFIERS FEATURES * Low forward voltage drop * High current capability * High reliability * High surge current capability * Epitaxial construction MECHANICAL

MBR3060 Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivat

UNISONIC TECHNOLOGIES CO., LTD MBR3060C Preliminary 30A SCHOTTKY BARRIER RECTIFIER  DESCRIPTION 1 The UTC MBR3060C is a 30A schottky barrier rectifier, it uses UTC’s advanced technology to provide th

MBR3050CT thru MBR3060CT High Tjm Low IRRM Schottky Barrier Diodes C(TAB) AC A A C A A=Anode, C=Cathode, TAB=Cathode VRRM VRMS VDC V V V MBR3050CT 50 35 50 MBR3060CT 60 42 60 Dimensions TO-220AB