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MBR3035CT डाटा शीट PDF( Datasheet )


डेटा पत्रक ( Datasheet PDF )

भाग संख्या विवरण मैन्युफैक्चरर्स PDF
MBR3035CT   Schottky Barrier Rectifier

Schottky Barrier Rectifier MBR3035CT FEATURES ·Schottky Barrier Chip ·Dual Rectifier Conduction, Positive Center Tap ·Low Power Loss/High Efficiency ·High Current Capability, Low Forward Voltage Drop ·Hi
INCHANGE
INCHANGE
PDF
MBR3035CT   SCHOTTKY BARRIER RECTIFIER

MBR3020CT~MBR30100CT SCHOTTKY BARRIER RECTIFIERS VOLTAGE FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O. Flame Retardant Epoxy Molding Compound. • Exceeds environme
Pan Jit International
Pan Jit International
PDF
MBR3035CT   Schottky Barrier Rectifier

MBR3030CT THRU MBR3060CT Features • Low Power Loss, High Efficiency • Guardring for Overvoltage Protection • Low Forward Voltage Drop And High Frequency Operation • Lead Free Finish/RoHS Compliant(Note
Micro Commercial Components
Micro Commercial Components
PDF
MBR3035CT   Dual Common Cathode Schottky Rectifier

www.vishay.com MBR30x5CT, MBRF30x5CT, MBRB30x5CT Vishay General Semiconductor Dual Common Cathode Schottky Rectifier TO-220AB ITO-220AB MBR30x5CT PIN 1 PIN 2 PIN 3 CASE 3 2 1 TO-263AB K MBRF30x5CT 1
Vishay Siliconix
Vishay Siliconix
PDF
MBR3035CT   30 A SCHOTTKY RECTIFIERS

MBR3020CT-MBR3045CT High-reliability discrete products and engineering services since 1977 30 A SCHOTTKY RECTIFIERS FEATURES  Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX lev
Digitron Semiconductors
Digitron Semiconductors
PDF
MBR3035CT   Dual Common Cathode Schottky Rectifier

MBR3035CT thru MBR30150CT Taiwan Semiconductor CREAT BY ART Dual Common Cathode Schottky Rectifier FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capabil
Taiwan Semiconductor
Taiwan Semiconductor
PDF
MBR3035CT   Schottky Barrier Rectifiers

MBR3035CT-MBR30150CT 30.0AMP. Schottky Barrier Rectifiers TO-220AB Features Plastic material used carries Underwriters Laboratory Classifications 94V-0 Metal silicon junction, majority carrier conduction Low p
LGE
LGE
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