MBR2535CT डाटा शीट PDF( Datasheet )

MBR2530CT thru MBR2540CT High Tjm Low IRRM Schottky Barrier Diodes C(TAB) AC A A C A A=Anode, C=Cathode, TAB=Cathode MBR2530CT MBR2535CT MBR2540CT VRRM V 30 35 40 VRMS V 21 24.5 28 VDC V 30 35 40 Dimens

MBR2535CT Technical Data Data Sheet N0732 Rev. A MBR2535CT SCHOTTKY RECTIFIER Features LKLLKJHYJ, TO-220AB  150C TJ operation  Center tap configuration  Low forward voltage drop  High purity,

LITE-ON SEMICONDUCTOR MBR2530CT thru 2560CT SCHOTTKY BARRIER RECTIFIERS REVERSE VOLTAGE - 30 to 60 Volts FORWARD CURRENT - 25 Amperes FEATURES Metal of silicon rectifier,majority carrier conducton Guard rin

SCHOTTKY RECTIFIER Bulletin PD-2.322 rev. E 01/07 MBR25..CT MBRB25..CT MBR25..CT-1 30 Amp IF(AV) = 30Amp VR = 35 - 45V Major Ratings and Characteristics Characteristics Values IF(AV) Rectangular waveform

Certificate TH97/10561QM Certificate TW00/17276EM MBR2535CT ~ MBR2560CT PRV : 35 ~ 60 Volts Io : 30 Amperes FEATURES : * Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 * Dual r

Features * Low power loss, high efficiency * Guard-ring for overvoltage protection * High surge current capability * Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC MBR2535CT THRU M

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MBR2535CT/D SWITCHMODE™ Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art