MBR2060 डाटा शीट PDF( Datasheet )

Schottky Barrier Rectifier INCHANGE Semiconductor MBR2060 FEATURES ·Metal of silicon rectifier, majonty carrier conduction ·Guard ring for transient protection ·Low power loss high efficiency ·High Surge

MBR2020 THRU MBR20100 SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 100 Volts Forward Current - 20.0 Amperes TO-220AC 0.160 (4.05) 0.140 (3.55) 0.105 (2.67) 0.095 (2.41) 0.415(10.54) MAX 0.410(10.41) 0

Sooner Power Semiconductor MBR2040 / MBR2060 High Power Schottky Barrier Rectifier Package Outline Dimensions ( millimeters ) BA C K L D 1 F E 2 J I H M N G PIN 1 PIN 2 TO-220AC Dim. Min. Max. A 10.0

MCC TM Micro Commercial Components
 omp   onents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • Metal of silicon rectifier, majority carr

MBR2040 THRU MBR20200 20A High Power Schottky Barrier Rectifiers ■ Features ■ Outline • Electrostatic discharge (ESD) test under IEC6100-4-2 standard >16ΚV(ΜΒR2040~ΜΒR2065). standard >10ΚV(ΜΒR2

MBR2040 THRU MBR20200 20.0 AMP SCHOTTKY BARRIER RECTIFIERS o FEATURES * Low forward voltage drop * High current capability * High reliability * High surge current capability * Epitaxial construction MECHANICA

肖特基势垒二极管 R SCHOTTKY BARRIER DIODE MBR2060 主要参数 MAIN CHARACTERISTICS 封装 Package IF(AV) VRRM Tj VF(max) 20（2×10） A 60 V 150 ℃ 0.65V （@Tj=125℃） 用途 z 高频开关�