MBR10H100CT डाटा शीट PDF( Datasheet )

MBR10H100CT SWITCHMODE] Power Rectifier 100 V, 10 A Features and Benefits • Low Forward Voltage: 0.61 V @ 125°C • Low Power Loss/High Efficiency • High Surge Capacity • 175°C Operating Junction Temper

MBR10H100CT – MBR10H200CT Taiwan Semiconductor 10A, 100V - 200V Schottky Barrier Rectifier FEATURES ● AEC-Q101 qualified available ● Low power loss, high efficiency ● Guard ring for overvoltage protec

www.vishay.com MBR(F,B)10H90CT, MBR(F,B)10H100CT Vishay General Semiconductor Dual Common Cathode High Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance TO-220AB I

MBR10H100CT Rev.E Mar.-2016 描述 / Descriptions TO-220 塑封封装 肖特基二极管。 Schottky Barrier Diode in a TO-220 Plastic Package. DATA SHEET 特征 / Features 损耗低，效率高。 Low pow

MBR10H100CT-MBR10H200CT 10.0AMP. Schottky Barrier Rectifiers TO-220AB Features — Plastic material used carries Underwriters Laboratory Classifications 94V-0 — Metal silicon junction, majority carrier conduct

MBR10H100CT SWITCHMODE] Power Rectifier 100 V, 10 A Features and Benefits • Low Forward Voltage: 0.61 V @ 125°C • Low Power Loss/High Efficiency • High Surge Capacity • 175°C Operating Junction Temper