MBR10200CT डाटा शीट PDF( Datasheet )

Schottky Barrier Rectifier INCHANGE Semiconductor MBR10200CT FEATURES ·Metal silicon junction，majority carrier conduction ·Low Power Loss/High Efficiency ·High current capability，low forward voltage dr

MBR1040CT THRU MBR10200CT 10A High Power Schottky Barrier Rectifiers ■ Features ■ Outline • Electrostatic discharge (ESD) test under IEC6100-4-2 standard >16ΚV(ΜΒR1040CT~ΜΒR1065CT). standard >10Κ

MOSPEC Schottky Barrier Rectifiers Using the Schottky Barrier principle with a Refractory metal capable of high temperature operation metal. The proprietary barrier technology allows for reliable operation up t

MBR1035CT-MBR10200CT 10.0AMP. Schottky Barrier Rectifiers TO-220AB Features Plastic material used carries Underwriters Laboratory Classifications 94V-0 Metal silicon junction, majority carrier conduction Low

MBR1035CT - MBR10200CT Taiwan Semiconductor CREAT BY ART 10A, 35V - 200V Dual Common Cathode Schottky Rectifiers FEATURES - Low power loss, high efficiency - Guard ring for over-voltage protection - High surge

DATA SHEET SEMICONDUCTOR MBR1020CT~MBR10200CT 10A SCHOTTKY BARRIER RECTIFIER FEATURES Schottky Barrier Chip Guard Ring for Transient Protection High Current Capability, Low Forward Low Reverse Leakage Curre

Data Sheet Customer： Product : Part No.: Issued Date: High Power Schottky Diode MBR1040CT/MBR1060CT/MBR10100CT/MBR10150CT MBR10200CT/MBR10250CT 11-Jan-11 Edition : REV.A VIKING TECH CORPORATION 光頡�