MBR10150CT डाटा शीट PDF( Datasheet )

Schottky Barrier Rectifier INCHANGE Semiconductor MBR10150CT FEATURES ·Metal silicon junction，majority carrier conduction ·Low Power Loss/High Efficiency ·High current capability，low forward voltage dr

MBR1040CT THRU MBR10200CT 10A High Power Schottky Barrier Rectifiers ■ Features ■ Outline • Electrostatic discharge (ESD) test under IEC6100-4-2 standard >16ΚV(ΜΒR1040CT~ΜΒR1065CT). standard >10Κ

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10 Amp High Voltage Power

MBR1035CT-MBR10200CT 10.0AMP. Schottky Barrier Rectifiers TO-220AB Features Plastic material used carries Underwriters Laboratory Classifications 94V-0 Metal silicon junction, majority carrier conduction Low

MBR10150CT MBR10150FCT MBR10150LCT MBR10150NCT Schottky Rectifier IF(Total) =10 A VR = 150 V VF = 0.9V Description/ Features This low cost Schottky rectifier has been optimized for low reverse leakage at high t

DATA SHEET SEMICONDUCTOR MBR1020CT~MBR10200CT 10A SCHOTTKY BARRIER RECTIFIER FEATURES Schottky Barrier Chip Guard Ring for Transient Protection High Current Capability, Low Forward Low Reverse Leakage Curre

Data Sheet Customer： Product : Part No.: Issued Date: High Power Schottky Diode MBR1040CT/MBR1060CT/MBR10100CT/MBR10150CT MBR10200CT/MBR10250CT 11-Jan-11 Edition : REV.A VIKING TECH CORPORATION 光頡�