MB81 fiche technique

No.	Partie #	Fabricant	Description
1	MB81C68A	Fujitsu	CMOS 16K-BIT HIGH-SPEED SRAM ax. (Active) 138 mW max. (Standby, TTL level) 83 mW max. (Standby, CMOS level) • Single +5 V power supply ±1 0% tolerance • TTL compatible inputs and outputs • Three-state outputs w~h OR-tie capac~y • Chip select for simplified memory expansion, a
2	MB81F643242C	Fujitsu Media Devices	4 X 512 K X 32 BIT SYNCHRONOUS DYNAMIC RAM a fully synchronous operation referenced to a positive edge clock whereby all operations are synchronized at a clock input which enables high performance and simple user interface coexistence. The MB81F643242C SDRAM is designed to reduce the complexi
3	MB81F641642C	Fujitsu	4 x 1 M x 16 BIT SYNCHRONOUS DYNAMIC RAM a fully synchronous operation referenced to a positive edge clock whereby all operations are synchronized at a clock input which enables high performance and simple user interface coexistence. The MB81F641642C SDRAM is designed to reduce the complexi
4	MB8116E	Fujitsu	MOS DRAM
5	MB81C69A	Fujitsu	CMOS 16K-BIT HIGH-SPEED SRAM uts • Three-state outputs w~h OR-tie capacity • Chip select for simplified memory expansion • Electrostatic protection for all inputs and outputs • Standard 20-pin Plastic Package: DIP MB81 C69A-xxP • Standard 20-pad Ceramic Package: LCC MB81C69A
6	814400D	ETC	MB814400
7	MB81F641642C-103FN	Fujitsu	4 x 1 M x 16 BIT SYNCHRONOUS DYNAMIC RAM a fully synchronous operation referenced to a positive edge clock whereby all operations are synchronized at a clock input which enables high performance and simple user interface coexistence. The MB81F641642C SDRAM is designed to reduce the complexi
8	MB81C79B	Fujitsu	CMOS 72K-BIT HIGH-SPEED SRAM 5 ns max. A11, A12 aocesstime -15 ns max. {MB81C79B-45) • Low power consumption: 550 mW max. (Operation) 138 mW max. (TTL Standby) 83 mW max. (CMOS Standby) • Single +5 V power supply ±1 0% tolerance • TTL compatible inputs and outputs • Three-st
9	8117405B	Fujitsu	MB8117405B
10	MB81C4256A	Fujitsu Media Devices	256K x 4-Bit Fast Page Mode Low Power DRAM
11	MB81F641642D	Fujitsu Microelectronics	4 x 1M x 16-Bit SDRAM a fully synchronous operation referenced to a positive edge clock whereby all operations are synchronized at a clock input which enables high performance and simple user interface coexistence. The MB81F641642D SDRAM is designed to reduce the complexi
12	MB81461	Fujitsu	262144 Bit Dual Port Dynamic RAM
13	MB81257-15	Fujitsu	NMOS 262144 Bit DRAM
14	MB81C1000A	Fujitsu	CMOS 1M x 1 Bit Fast page Mode Dynamic RAM
15	MB81464	Fujitsu	MOS 262144 Bit DRAM
16	MB81257-80	Fujitsu	MOS 262144 Bit DRAM
17	MB8116H	Fujitsu	MOS DRAM
18	MB8116NC	Fujitsu	MOS DRAM
19	MB81256-15	Fujitsu	(MB81256-10/-12/-15) NMOS 262144 Bit DRAM
20	MB81416	Fujitsu	NMOS 65536 Bit DRAM