M02N60 डाटा शीट PDF( Datasheet )
डेटा पत्रक ( Datasheet PDF ) |
| भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
| M02N60 | N Channel MOSFET N Channel MOSFET www.DataSheet4U.com 2.0A
M02N60
PIN CONFIGURATION
TO-251 TO-252
FEATURE Robust High Voltage Temination. Avalanche Energy Specified Source-to Drain Diode Recovery Time Comparable to a Discret |
 Stanson Technology |
|
| M02N601D | Silicon N-Channel Power MOSFET M02N601D
600V N-Channel General Purpose Switching Device Applications
■ Features
• 600V, 2.0A, RDS(on) = maximum 5Ω@VGS = 10V. • 100% avalanche, EAS tested. • Suffix "G" indicates Halogen-free part, e |
 CITC |
|
| M02N601D1 | Silicon N-Channel Power MOSFET M02N601D1
600V N-Channel General Purpose Switching Device Applications
■ Features
• 600V, 2.0A, RDS(on) = maximum 5Ω@VGS = 10V. • 100% avalanche, EAS tested. • Suffix "G" indicates Halogen-free part, |
CITC |
|
| M02N60B | N Channel MOSFET N Channel MOSFET www.DataSheet4U.com 2.0A
M02N60B
PIN CONFIGURATION
FEATURE Robust High Voltage Temination. Avalanche Energy Specified Source-to Drain Diode Recovery Time Comparable to a Discrete Fast Recove |
Stanson Technology |
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