डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
LT1N60 | N-channel MOSFET Xi′an Longtium Microelectronics Technology Developing Co., Ltd.
Features
High ruggedness RDS(ON) (Max 9 Ω)@VGS=10V Gate Charge (Max 6nC) Improved dv/dt Capability 100% Avalanche Tested
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Longtium Microelectronics |
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LT1N60 | N-channel MOSFET | Longtium Microelectronics |
www.DataSheet.in | 2017 | संपर्क |