डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
KTD2061 | Silicon NPN Power Transistors isc Silicon NPN Power Transistor
DESCRIPTION ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 180V(Min) ·Low Collector Saturation Voltage-
: VCE(sat)= 1.0V(Max)@ (IC= 0.5A, IB= 50mA) ·Complement to Ty |
Inchange Semiconductor |
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KTD2061 | EPITAXIAL PLANAR NPN TRANSISTOR SEMICONDUCTOR
TECHNICAL DATA
HIGH VOLTAGE APPLICATION TV, MONITOR VERTICAL OUTPUT APPLICATION DRIVER STAGE APPLICATION COROR TV CLASS B SOUND OUTPUT APPLICATION
FEATURES High Breakdown Voltage : VCEO=180V(Min.) |
KEC |
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