KTD1898 डाटा शीट PDF( Datasheet )

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. FEATURES 1W (Mounted on Ceramic Substrate). Small Flat Package. Complementary to KTB1260. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Ba

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors KTD1898 TRANSISTOR (NPN) SOT-89-3L FEATURES z Small Flat Package z General Purpose Application 1. BASE 2. COLLECT

Production specification Power Transistor FEATURES z High VCEO,VCEO=80V. z High IC,IC=1A(DC). z Good HFE Linearity. z Low VCE(sat). z Complement the 2SB1260. Pb Lead-free KTD1898 APPLICATIONS z NPN silicon

KTD1898 Epitaxial Planar NPN Transistors SOT-89 1 1. BASE 2. COLLECTOR 3. EMITTER 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector

KTD189 TRANSISTOR (NPN) FEATURES z Small Flat Package z General Purpose Application SOT-89-3L 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC R

KTD1898 Elektronische Bauelemente 1A , 100V NPN Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Small Flat Package General Purpose Applicatio

RoHS KTD1898 KTD1898 TRANSISTOR (NPN) DFEATURES Power dissipation TPCM: 500 mW (Tamb=25℃) .,LCollector current ICM: Collector-base voltage 1A OV(BR)CBO: 100 V Operating and storage junction temperatu