डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
KTD1414 | Silicon NPN Power Transistors isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min) ·Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.5V(Max) @IC= 3A ·High DC Current Gain
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Inchange Semiconductor |
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KTD1414 | EPITAXIAL PLANAR NPN TRANSISTOR SEMICONDUCTOR
TECHNICAL DATA
KTD1414
EPITAXIAL PLANAR NPN TRANSISTOR
SWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER APPLICATIONS.
FEATURES High DC Current Gain : hFE=2000(Min.) at VCE=2V, IC=1A.
M |
KEC |
www.DataSheet.in | 2017 | संपर्क |