डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
KTD1351 | TRIPLE DIFFUSED NPN TRANSISTOR SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
FEATURES ᴌLow Saturation Voltage
: VCE(sat)=1.0V(Max.) at IC=2A, IB=0.2A ᴌComplementary to KTB988.
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
SYMBO |
KEC |
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KTD1351 | Silicon NPN transistor KTD1351
Rev.F Mar.-2016
DATA SHEET
描述 / Descriptions
TO-220 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-220 Plastic Package.
特征 / Features
饱和压降低,与 KTB988 互� |
BLUE ROCKET ELECTRONICS |
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KTD1351 | NPN Transistor JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220 Plastic-Encapsulate Transistors
KTD1351 TRANSISTOR (NPN)
FEATURES z Low Saturations Voltage
APPLICATIONS z General Purpose Applications
TO – 220
1. |
JCET |
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KTD1351 | NPN Transistor isc Silicon NPN Power Transistors
DESCRIPTION ·Low Saturation Voltage-
: VCE(sat)=1.0V(Max)@ (IC= 2A, IB=0.2A) ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min) ·Complement to Type KTB988 ·Mi |
INCHANGE |
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