KTC4419 डाटा शीट PDF( Datasheet )

isc Silicon NPN Power Transistor KTC4419 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and

SEMICONDUCTOR TECHNICAL DATA SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE SWITCHING APPLICATION. HIGH SPEED DC-DC CONVERTER APPLICATION. FEATURES Excellent Switching Times. : ton=1.0 S(Max.), tf=0.5 S(Max.) at