KTC4379 डाटा शीट PDF( Datasheet )

30Ω J B EU SEMICONDUCTOR TECHNICAL DATA POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. FEATURES Low Saturation Voltage : VCE(sat)=0.5V(Max.) (IC=1A) High Speed Switching Time : tstg=1.0 S(Typ.

KTC4379 Rev.E Mar.-2016 DATA SHEET 描述 / Descriptions SOT-89 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-89 Plastic Package.  特征 / Features 饱和压降低,开关时间快�

KTC4379 NPN EPITAXIAL PLANAR TRANSISTOR P b Lead(Pb)-Free 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 SOT-89 ABSOLUTE MAXIMUM RATINGS(Ta Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage

Product specification KTC4379 SOT-89 Unit:mm 1.50 ±0.1 ■ Features ● Collector Power Dissipation: PC=500mW ● Collector Current: IC=2A ● Complementary to KTA1666 4.50±0.1 1.80±0.1 1 0.48±0.1 2 3

KTC4379 TRANSISTOR (NPN) FEATURES Low saturation voltage z High speed switching time z Complementary to KTA1666 z MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter

REPLACEMENT TYPE : KTC4379 FEATURES  Low Saturation Voltage  High Speed Switching Time  Complementary to HEA1666 HETC4379(NPN) GENERAL PURPOSE TRANSISTOR MAXIMUM RATINGS (TA = 25°C unless otherwise

Production specification NPN Silicon Epitaxial Planar Transistor FEATURES Pb  High speed switching time. Lead-free  Low saturation voltage:VCE(sat)=0.5V(Max).  PC=1~2W(Mounted on ceramic substra