डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
KTC4377 | TRANSISTOR SMD Type
Transistors Diodes IC Transistor T
Product specification
KTC4377
SOT-89
Unit:mm
1.50 ±0.1
■ Features
● Collector Power Dissipation: PC=500mW ● Collector Current: IC=2A
4.50±0.1 1.80±0.1
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TY Semiconductor |
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KTC4377 | TRANSISTOR KTC4377
TRANSISTOR (NPN)
FEATURES Low voltage MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltag |
Jin Yu Semiconductor |
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KTC4377 | NPN EPITAXIAL PLANAR TRANSISTOR KTC4377
NPN EPITAXIAL PLANAR TRANSISTOR
P b Lead(Pb)-Free
1. BASE 2. COLLECTOR 3. EMITTER
1 2 3
Features:
* Low saturation voltage, VCE(sat) ≤0.5V@2A/50mA * Excellent DC current gain characteristics.
SOT-8 |
Weitron |
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KTC4377 | NPN Silicon Epitaxial Planar Transistor Production specification
NPN Silicon Epitaxial Planar Transistor
FEATURES
Pb
High DC Current Gain and Excellent hFE Linearity Lead-free
: hFE(1)=140 600(VCE=1V, IC=0.5A)
: hFE(2)=70(Min.), 140(Typ.) ( |
GME |
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KTC4377 | Epitaxial Planar NPN Transistor SMD Type
Transistors
Epitaxial Planar NPN Transistor KTC4377
■ Features
● Collector Power Dissipation: PC=500mW ● Collector Current: IC=2A
SOT-89
4.50±0.1 1.80±0.1
123
0.48±0.1
0.53±0.1
2.50±0 |
Kexin |
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KTC4377 | GENERAL PURPOSE TRANSISTOR REPLACEMENT TYPE : KTC4377
FEATURES Low Voltage
HETC4377 (NPN)
GENERAL PURPOSE TRANSISTOR
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Parameter
Symbol Value
Collector-Base Voltage
VCBO
30
Co |
HOTTECH |
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KTC4377 | NPN Transistor RoHS KTC4377
KTC4377 TRANSISTOR (NPN)
DFEATURES Power dissipation
TPCM: 0.5 W (Tamb=25℃)
.,LCollector current
ICM: 2 Collector-base voltage
A
OV(BR)CBO:
30 V
Operating and storage junction temperatur |
WEJ |
www.DataSheet.in | 2017 | संपर्क |