डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
KTC4370A | Silicon NPN Power Transistors isc Silicon NPN Power Transistor
KTC4370A
DESCRIPTION ·High Collector-Emitter Breakdown Voltage
VCEO= 180V(Min) ·Complement to Type KTA1659A ·Minimum Lot-to-Lot variations for robust device
performance and |
Inchange Semiconductor |
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KTC4370A | NPN Transistors DIP Type
Transistors
■ Features
● High Transition Frequency ● Complementary to KTA1659A
15.87 ±0.20 3.30 ±0.20
NPN Transistors KTC4370A
TO-220F
±0.20
φ3.18±0.20
±0.20
2.54 ±0.20
Unit: mm 0. |
Kexin |
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KTC4370A | EPITAXIAL PLANAR NPN TRANSISTOR SEMICONDUCTOR
TECHNICAL DATA
KTC4370/A
EPITAXIAL PLANAR NPN TRANSISTOR
HIGH VOLTAGE APPLICATION.
FEATURES High Transition Frequency : fT=100MHz(Typ.). Complementary to KTA1659/A.
MAXIMUM RATING (Ta=25 )
CHA |
KEC |
www.DataSheet.in | 2017 | संपर्क |