KTC4370 डाटा शीट PDF( Datasheet )

isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage VCEO= 160V(Min) ·Complement to Type KTA1659 ·Minimum Lot-to-Lot variations for robust device performance and reliable o

SEMICONDUCTOR TECHNICAL DATA KTC4370/A EPITAXIAL PLANAR NPN TRANSISTOR HIGH VOLTAGE APPLICATION. FEATURES High Transition Frequency : fT=100MHz(Typ.). Complementary to KTA1659/A. MAXIMUM RATING (Ta=25 ) CHA

isc Silicon NPN Power Transistor KTC4370A DESCRIPTION ·High Collector-Emitter Breakdown Voltage VCEO= 180V(Min) ·Complement to Type KTA1659A ·Minimum Lot-to-Lot variations for robust device performance and

DIP Type Transistors ■ Features ● High Transition Frequency ● Complementary to KTA1659A 15.87 ±0.20 3.30 ±0.20 NPN Transistors KTC4370A TO-220F ±0.20 φ3.18±0.20 ±0.20 2.54 ±0.20 Unit: mm 0.

SEMICONDUCTOR TECHNICAL DATA KTC4370/A EPITAXIAL PLANAR NPN TRANSISTOR HIGH VOLTAGE APPLICATION. FEATURES High Transition Frequency : fT=100MHz(Typ.). Complementary to KTA1659/A. MAXIMUM RATING (Ta=25 ) CHA