KTC3879 डाटा शीट PDF( Datasheet )

Elektronische Bauelemente KTC3879 0.05A , 35V NPN Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES High Power Gain APPLICATIONS High Frequenc

Plastic-Encapsulate Transistors FEATURES • High power gain KTC3879 (NPN) Maximum Ratings (Ta=25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous

NPN Silicon Epitaxial Planar Transistor FEATURES z High power gain. Pb Lead-free APPLICATIONS z High frequency application. z HF,VHF band amplifier appilication. Production specification KTC3879 ORDERING I

KTC3879 TRANSISTOR (NPN) FEATURES  High Power Gain APPLICATIONS  High Frequency Application  HF,VHF Band Amplifier Application MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter V

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KTC3879S Rev.E Mar.-2016 DATA SHEET 描述 / Descriptions SOT-23 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-23 Plastic Package.  特征 / Features 功率增益高。 High Gpe. 

SEMICONDUCTOR TECHNICAL DATA HIGH FREQUENCY APPLICATION. HF, VHF BAND AMPLIFIER APPLICATION. FEATURE High Power Gain : Gpe=29dB(Typ.) (f=10.7MHz) MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base