डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
KTA2015 | PNP Transistor RoHS KTA2015
SOT-323
KTA2015 TRANSISTOR (PNP)
DFEATURES Power dissipation
TPCM: 0.1 W (Tamb=25℃)
.,LCollector current
ICM: -0.5 Collector-base voltage
A
OV(BR)CBO:
-35 V
Operating and storage juncti |
WEJ |
|
KTA2015 | EPITAXIAL PLANAR PNP TRANSISTOR SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION.
FEATURES ᴌExcellent hFE Linearity
: hFE(2)=25(Min.) at VCE=-6V, IC=-400mA. ᴌComplementary to KTC4076.
MAXIMUM RATING (Ta=25 |
KEC |
|
KTA2015 | PNP General Purpose Transistors PNP General Purpose Transistors
P b Lead(Pb)-Free
MAXIMUM RATINGS(Ta=25°C)
Rating Collector-Base Voltage Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous Total Device Dissipation |
WEITRON |
|
KTA2015 | PNP Transistor KTA2015
TRANSISTOR (PNP)
FEATURES Excellent hFE Linearity Complementary to KTC4076 APPLICATIONS General Purpose Switching
SOT–323
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Par |
Jin Yu Semiconductor |
|
KTA2015 | PNP Silicon Epitaxial Planar Transistor PNP Silicon Epitaxial Planar Transistor
FEATURES
z Power dissipation.(PC=100mW) z Excellent hFE Linearity. z Complementary to KTC4076. z Small package.
Pb
Lead-free
Production specification
KTA2015
APPLICAT |
GME |
www.DataSheet.in | 2017 | संपर्क |