KSD5080 डाटा शीट PDF( Datasheet )

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification KSD5080 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·High Reliability ·Built-in Damper

J. C/ 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. , Una. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon NPN Power Transistor DESCRIPTION • High Breakdown Voltage- :VCBo=1500V(M