डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
KSD5075 | Silicon NPN Power Transistor INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
KSD5075
DESCRIPTION ·High Breakdown Voltage-
: VCBO= 1500V (Min) ·High Switching Speed ·High Reliability
APPLICATIONS ·De |
Inchange Semiconductor |
|
KSD5075 | Silicon NPN Power Transistor J.E.tiE.u <3z.mi-t.onau.ctoi L/^ioaucta, Una.
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tJ
20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A.
Silicon NPN Power Transistor
DESCRIPTION • High Breakdown Voltage-
: VCBO= 1500V (Min) • High Swit |
NJS |
|
KSD5075T | Silicon NPN Power Transistor INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
KSD5075T
DESCRIPTION ·High Breakdown Voltage-
: VCBO= 1500V (Min) ·High Switching Speed ·High Reliability
APPLICATIONS ·E |
Inchange Semiconductor |
|
KSD5075T | Silicon NPN Power Transistor 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A.
, One.
Silicon NPN Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005 FAX: (973) 376-8960
KSD5075T
DESCRIPTION • High Breakdown Voltage-
:VCBo=1500 |
NJS |
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