KSB601 डाटा शीट PDF( Datasheet )

isc Silicon PNP Darlington Power Transistor KSB601 DESCRIPTION ·High DC Current Gain- : hFE = 2000(Min)@ IC= -3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -100V(Min) ·Low Collector-Emitter Satur

KSB601 KSB601 Low Frequency Power Amplifier • Medium Speed Switching Industrial Use • Complement to KSD560 1 TO-220 2.Collector 3.Emitter 1.Base PNP Epitaxial Silicon Darlington Transistor Absolute Max