KSB1366 डाटा शीट PDF( Datasheet )

KSB1366 KSB1366 LOW FREQUENCY POWER AMPLIFIER • Complement to KSD2012 PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter VCBO VCEO VEBO IC IB PC P

isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·Collector Power Dissipation- : PC= 25 W@ TC= 25℃ ·Low Collector Saturation Voltage- : VCE(sat)= -1