KSB1151 डाटा शीट PDF( Datasheet )

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors KSB1151 TRANSISTOR (PNP) FEATURES z Low Collector-Emitter Saturation Voltage z Large Collector Current z High Power Dis

isc Silicon PNP Power Transistor DESCRIPTION ·Large Collector Current ·Low Collector Saturation Voltage ·High Power Dissipation ·Complement to KSD1691 ·Minimum Lot-to-Lot variations for robust device perf

KSB1151 KSB1151 Feature • Low Collector-Emitter Saturation Voltage • Large Collector Current • High Power Dissipation : PC=1.3W (Ta=25°C) • Complement to KSD 1691 1 TO-126 1. Emitter 2.Collector 3