| No. | Partie # | Fabricant | Description | Fiche Technique |
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Korea Electronics |
(KRC281M - KRC286M) EPITAXIAL PLANAR NPN TRANSISTOR High emitter-base voltage : VEBO=25V(Min) High reverse hFE : reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA) Low on resistance : Ron=1 (Typ.) (IB=5mA) With Built-in Bias Resistors. Simplify Circuit Design. Reduce a Quantity of Parts and Manufacturing Proces |
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