डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
KDV350 | VARIABLE CAPACITANCE DIODE SEMICONDUCTOR
TECHNICAL DATA
VCO.
FEATURES Low Series Resistance : rS=0.50 (Max.) Small Package.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Voltage Junction Temperature
VR Tj
Storage Temperatur |
KEC |
|
KDV350E | Silicon Diode SEMICONDUCTOR
TECHNICAL DATA
VCO.
FEATURES Low Series Resistance : rS=0.50 (Max.) Small Package. (ESC Package)
KDV350E
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE
CE 1
CATHODE MARK B A
GG
MAXIM |
KEC |
|
KDV350F | Silicon Diode SEMICONDUCTOR
TECHNICAL DATA
VCO FOR UHF/VHF BAND.
FEATURES High Capacitance Ratio : C1V/C4V=2.8 (Min.) Low Series Resistance. : rS=0.5 (max.) Good C-V linearity.
KDV350F
VARIABLE CAPACITANCE DIODE SILICON EPI |
KEC |
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